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Breakthrough Ultra-High-Speed Memory Technology That Solves Scaling Pace Limit in Embedded Memory Design NEC Electronics Corporation announced that they have succeeded in developing an ultra-high-speed memory technology that solves the design scaling limit caused by noise margin degradation in ultra-high speed embedded memory. Ultra-high-speed embedded memory devices are indispensable for next-generation, large-scale integrated (LSI) devices and high-speed computer systems. This new technology enables static random access memory (SRAM) to keep a scaling pace with complementary metal-oxide-semiconductor (CMOS) logic circuits.
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