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Infineon Presents New Low-Power Circuit Techniques for 120-nm and 90-nm CMOS Technologies with Reduced Leakage At the IEEE International Solid State Circuits Conference 2005 in San Francisco (February 6 - 10, 2005), Infineon Technologies AG (FSE/NYSE: IFX) presents novel circuit techniques for leakage current reduction in 120nm and 90nm CMOS technologies. Scientists and Infineon`s Communication business unit working in close collaboration with the Technical University of Munich have developed innovative circuit concepts to reduce leakage currents by up to three orders of magnitude. In a further research project, in cooperation with the Christian Albrechts University of Kiel, different circuit techniques were implemented, offering an optimized combination of high speed and low power consumption.
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