News
New Low Voltage Trench MOSFETs Improve Power Circuit Efficiency and Battery-Life Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These devices reduce resistance between drain and source (RDS(on)) to improve overall power circuit efficiency by 30 percent in portable products when compared to similarly packaged competitive solutions.
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