News
Sharp to Introduce High-Throughput Combination Memory for Third-Generation Mobile Phones Sharp Corporation has developed a high-speed combination flash/SCRAM memory device featuring a throughput of 320 MBps (bytes/second), more than three times the transfer rate of its predecessor model. The LRS1887 High-Speed Memory is optimal for advanced third-generation mobile phones as well as other applications requiring high-speed transfer of large volumes of data. Sharp is currently shipping samples of the LRS1887, and will start mass production in July 2005.
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