News
ProMOS Debuts First 90nm Silicon with High Yield ProMOS Technologies today announced that the first pilot lot by 90nm stack technology node at ProMOS 300mm Fab 3 has successfully wafered out with yield above 60%. ProMOS is the very first Taiwan DRAM company to achieve this breakthrough with high yield on the pilot wafers. This superior performance showcases ProMOS` excellence in technological advancement and marks a significant milestone in leading-edge 90nm process technology.
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