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Fujitsu Develops Breakthrough Technology for Low-Cost Production of Gallium-Nitride HEMT Reduces production costs to less than 1/3Fujitsu Laboratories Ltd. today announced the development of a technology that enables low-cost production of gallium-nitride (GaN)(1) high electron mobility transistors (HEMT)(2), a key technology in mobile base station amplifiers for 3G and beyond. This breakthrough technology reduces GaN HEMT production costs to less than one-third that of conventional levels, thereby contributing to the realization of lower-cost GaN HEMT-based amplifiers.
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