News
New mathematical model better describes transistor behavior Penn State and Philips researchers have merged the best features of their respective approaches to produce a new mathematical model that describes the behavior of the MOS transistor in a wide class of integrated circuits found in the majority of electronic devices from computers to digital watches to communications systems.Certain circuits can only be simulated accurately using the new approach, known as the PSP model, including passive mixers used in mobile phones to increase battery life and current-ratio based circuits used in analog to digital converters.
|