News
k-Space introduces high resolution thin film stress mapping tool Ann Arbor, MI – k-Space Associates, Inc. has announced that it developed the kSA MOS Ultra-Scan, a new ex-situ thin film curvature mapping tool which can be used to quantitatively map the induced thin film stress of an entire wafer surface. Applications include Silicon on Insulator (SOI), Strained Silicon, and high performance optical coatings.
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