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New transistor breaks speed record A pair of physicists in the US has built the fastest ever transistor: one that can operate at a frequency of over 600 gigahertz. Developed by Walid Hafez and Milton Feng at the University of Illinois at Urbana-Champaign, the device is made from the semiconductors indium phosphide and indium gallium arsenide (Appl. Phys. Lett. 86 152101).
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