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High Voltage DTMOS Power MOSFET Using A Super Junction Structure To Reduce Power Consumption Continuing its leadership role in developing innovative power semiconductors, Toshiba America Electronic Components, Inc. (TAEC) and its parent Toshiba Corp. announced a new power MOSFET called DTMOS, that employs a new super junction structure that enables a reduction in power consumption caused by on-state resistance (RDSON ) to approximately 40 percent of the value typically achieved with conventional MOSFETs. Developed by Toshiba, the first device in the DTMOS family, TK15A60S, is targeted for use in power supplies in television sets, home appliances, AC adapters and ballast lighting. Toshiba began shipping samples of the new MOSFET today, and will begin production in April 2005.
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